Presentation On Ion Track Based Tunable Devices

Ion track based tunable devices (TEMPOS) as humidity sensor: A Neural Network approach

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Ion Track Based Tunable Devices Presentation Transcript:
1.Ion track based tunable devices (TEMPOS) as humidity sensor: A Neural Network approach

2.Plan of Talk
1.Tunable Electronic Materials with Pores in Oxide on Silicon (TEMPOS) as HUMIDITY Sensor

2. TEMPOS and ARTIFICIAL NEURAL NETWORK

3.Introduction
What are Ion Tracks?

Track Formation/Track Etching

Latent Ion Track Applications

Etched Ion Track Applications

Silicon Electronics with Ion Tracks

      The TEMPOS (Tunable Electronic Materials with Pores in Oxide on Silicon) concept, its applications

4.Interaction of radiation with matter: energy loss

5.Ion track formation

6.Track etching
It removes preferentially the dangling/loose bonds in latent ion tracks
Transformation of latent ion tracks into a hollow channel
Size and shape of track can be tailored
   Depends on the
energy deposition of ion
radiation sensitivity of material
storage conditions of ion-irradiated material before etching
COMMON ETCHANTS-----HF, KOH, NaOH, HCl.

7.Latent track applications

8.Etched track applications
Filters
Intelligent pores
Medicine
Ecology
Micro and nano structures-e.g.”TEMPOS”

9.TEMPOS (Tunable Electronic Materials with Pores in Oxide on Silicon) Structure

10.Preparation of TEMPOS structures
Dielectric (SiO2) layers formed on Si wafers irradiated with Swift Heavy Ions
     (Au26+, 350 MeV) at fluence 109 ions/cm2.
Subsequent immersion etching (HF as etchant)  leads to continuous pores with diameter 20-100 nm.
Pores filled with conducting/semiconducting material
Metallic contacts made
ELECTRICAL CHARACTERIZATION of TEMPOS devices by Combined ac-dc technique
Properties of TEMPOS depend on:
Etched track diameter and length
Material embedded in tracks
Underlying Silicon
Oxide layer