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Saturday, August 7, 2010

PPT On OUM

Ovonic Unified Memory Presentation Transcript:

1. Memory-information
retention Various forms of storage are: Primary storage Secondary and off-line storage Tertiary and database storage Network storage Characteristics of storage are: Volatility of information Ability to access non-contiguous information Ability to change information Classification of the Memory on the bases of Volatility of information is: Volatile Memory Non-volatile Memory

2. Nonvolatile Memory Protection of data in the event of power loss Periodic refreshing Modern Approaches of Nonvolatile Memory FRAM: Technique used- ferroelectricity MRAM: Technique used-ferromagnetism OUM: Technique used- phase changes in the thin-film 3DM: Technique used- multiple layers of active circuitry on the silicon substrate

3. Phase Change Memory Technology Describes a class of non-volatile memory devices Exploits differences in the electrical resistivity of a material in different phases (solid, liquid, gas, condensate and plasma) Graphical representation of a basic PCM storage element Relative to the amorphous state, the polycrystalline state shows a dramatic increase in free electron density, similar to a metal.

4. OUM Definition:
Phase Change Memory Changes the state stores information excellent solid-state memory properties. Ovonyx microelectronics memory technology developed by Mr. Stanford Ovshinsky Energy Conversion Devices (ECD) Inc. Ovonic unified memory – derived from ''Ovshinsky'' and ''electronic''. known as phase change memory OUM allows the rewriting of CD & DVDs .

5. Characteristics of OUM
Essentially nondestructive use: Can be read and write to trillionths of times The OUM solid-state memory Has cost advantages over conventional solid-state memories very small active storage media, and simple device structure. OUM requires fewer steps in an IC manufacturing process resulting in : reduced cycle times, fewer defects, and greater manufacturing flexibility.

6. Chalogenide
The PCM technology being developed by Intel uses a class of materials known as chalcogenides (“kal-koj--uh-nyde”). Basically, chalogenide alloy materials use one or more elements from column VI of the Periodic Table. OUM devices use an alloy system of GeSbTe (Germanium-Antimony-Tellurium). Chalcogenides are alloys that contain an element in the Oxygen/Sulphur family of the Periodic Table (Group 16 in the new style or Group VIa in the old style Periodic Table).

7. OUM
Devices use the GeSbTe alloy system. Crystal Structures for GeSbTe Pseudobinary Alloys:

8. Working Phase
change memory also called ovonic unified memory (OUM), Phase states are programmed by the application of a current pulse through a Mosfet, heating a small volume of the material with a current pulse to make the transition.

9. thermally activated, rapid, reversible change chalcogenide alloy are an amorphous state and a polycrystalline state. polycrystalline state :dramatic increase in free electron density, similar to a metal.

10. For more please refer our PPT. Thanks.

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