Presentation On FERMI FET
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FERMI FET Presentation Transcript:
1. CMOS EVOLUTION
CMOS evolution helped in reduction of Operating voltage as transistor siZe is reduced
2. BASIC FET
The FET is thus a three terminal, unipolar device conducting semi-conductor channel between two ohmic contacts; source and drain. The gate terminal controls the channel current and is a very high-impedance terminal
3. “FIELD EFFECT”
The name ‘field effect’ is due to the fact that the current flow is controlled by potential set up in the device by an external applied voltage.
4. TYPES OF FET
JFET
MOSFET
WE CONSIDER MOSFET
5. MOSFET
N-channel MOSFET 2 lightly heavily doped n- regions diffused into a lightly doped p-type substrate; separated by 25 μm A conducting layer of metal will act as the gate
6. “BURRIED CHANNEL TRANSISTORS”
SCA and BCA transistors make up the broad family of “buried channel” transistors
7. COMPARISON OF FERMI FET & MOSFET
The output of the mixed-mode simulations is shown in the figure. Even at 0.4 mm gate length the low threshold Fermi-FET is almost twice as fast as the MOSFET in this simple circuit.
8. FERMI - FET
The Fermi-FET transistor is a specific optimization of buried channel transistors A Fermi-FET transistor occupies the region near the crossover from BCA to SCA devices So Advantage of both SCA and BCA device
9. APPLICATION
1.Higher drive current and lower capacitance So useful for digital products, thus speed of operation is improved 2.Used in DSP :FERMI FET TECHNOLOGY Overheads CMOS TECHNOLOGY (Fermi-FET offer lower noise than CMOS, due to its buried-channel nature.)
10. Thanks.
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FERMI FET Presentation Transcript:
1. CMOS EVOLUTION
CMOS evolution helped in reduction of Operating voltage as transistor siZe is reduced
2. BASIC FET
The FET is thus a three terminal, unipolar device conducting semi-conductor channel between two ohmic contacts; source and drain. The gate terminal controls the channel current and is a very high-impedance terminal
3. “FIELD EFFECT”
The name ‘field effect’ is due to the fact that the current flow is controlled by potential set up in the device by an external applied voltage.
4. TYPES OF FET
JFET
MOSFET
WE CONSIDER MOSFET
5. MOSFET
N-channel MOSFET 2 lightly heavily doped n- regions diffused into a lightly doped p-type substrate; separated by 25 μm A conducting layer of metal will act as the gate
6. “BURRIED CHANNEL TRANSISTORS”
SCA and BCA transistors make up the broad family of “buried channel” transistors
7. COMPARISON OF FERMI FET & MOSFET
The output of the mixed-mode simulations is shown in the figure. Even at 0.4 mm gate length the low threshold Fermi-FET is almost twice as fast as the MOSFET in this simple circuit.
8. FERMI - FET
The Fermi-FET transistor is a specific optimization of buried channel transistors A Fermi-FET transistor occupies the region near the crossover from BCA to SCA devices So Advantage of both SCA and BCA device
9. APPLICATION
1.Higher drive current and lower capacitance So useful for digital products, thus speed of operation is improved 2.Used in DSP :FERMI FET TECHNOLOGY Overheads CMOS TECHNOLOGY (Fermi-FET offer lower noise than CMOS, due to its buried-channel nature.)
10. Thanks.
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